APA引文

Han, G., Yee, Y., Guo, P., Yang, Y., Fan, L., Zhan, C., . . . ENGINEERING, E. &. C. (2014). Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction.

Chicago Style Citation

Han, G., Y.S Yee, P. Guo, Y. Yang, L. Fan, C. Zhan, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Enhancement of TFET Performance Using Dopant Profile-Steepening Implant and Source Dopant Concentration Engineering At Tunneling Junction. 2014.

MLA引文

Han, G., et al. Enhancement of TFET Performance Using Dopant Profile-Steepening Implant and Source Dopant Concentration Engineering At Tunneling Junction. 2014.