Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain

• Main Authors: Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Contact resistance R C; Dopant segregation (DS); Germanium-tin (Ge 1-xSn x); Ni(Ge 1-xSn x)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82169
• Institution: National University of Singapore

10.1109/LED.2012.2186430