Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain

10.1109/LED.2012.2186430

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Bibliographic Details
Main Authors:	Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Contact resistance R C Dopant segregation (DS) Germanium-tin (Ge 1-xSn x) Ni(Ge 1-xSn x)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82169
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82169
record_format	dspace
spelling	sg-nus-scholar.10635-821692023-10-25T20:05:13Z Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain Han, G. Su, S. Zhou, Q. Guo, P. Yang, Y. Zhan, C. Wang, L. Wang, W. Wang, Q. Xue, C. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact resistance R C Dopant segregation (DS) Germanium-tin (Ge 1-xSn x) Ni(Ge 1-xSn x) 10.1109/LED.2012.2186430 IEEE Electron Device Letters 33 5 634-636 EDLED 2014-10-07T04:26:12Z 2014-10-07T04:26:12Z 2012-05 Article Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C. (2012-05). Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain. IEEE Electron Device Letters 33 (5) : 634-636. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2186430 07413106 http://scholarbank.nus.edu.sg/handle/10635/82169 000303322500002 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Contact resistance R C Dopant segregation (DS) Germanium-tin (Ge 1-xSn x) Ni(Ge 1-xSn x)
spellingShingle	Contact resistance R C Dopant segregation (DS) Germanium-tin (Ge 1-xSn x) Ni(Ge 1-xSn x) Han, G. Su, S. Zhou, Q. Guo, P. Yang, Y. Zhan, C. Wang, L. Wang, W. Wang, Q. Xue, C. Cheng, B. Yeo, Y.-C. Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
description	10.1109/LED.2012.2186430
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Han, G. Su, S. Zhou, Q. Guo, P. Yang, Y. Zhan, C. Wang, L. Wang, W. Wang, Q. Xue, C. Cheng, B. Yeo, Y.-C.
format	Article
author	Han, G. Su, S. Zhou, Q. Guo, P. Yang, Y. Zhan, C. Wang, L. Wang, W. Wang, Q. Xue, C. Cheng, B. Yeo, Y.-C.
author_sort	Han, G.
title	Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
title_short	Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
title_full	Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
title_fullStr	Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
title_full_unstemmed	Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
title_sort	dopant segregation and nickel stanogermanide contact formation on p +ge 0.947sn 0.053 source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82169
_version_	1781784072882749440

Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain

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