Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing

10.1149/1.2073048

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Bibliographic Details
Main Authors: Poon, C.H., Tan, L.S., Cho, B.J., Du, A.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82168
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Institution: National University of Singapore