Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing

10.1149/1.2073048

Saved in:

Bibliographic Details
Main Authors:	Poon, C.H., Tan, L.S., Cho, B.J., Du, A.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82168
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82168
record_format	dspace
spelling	sg-nus-scholar.10635-821682024-11-14T01:24:31Z Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing Poon, C.H. Tan, L.S. Cho, B.J. Du, A.Y. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2073048 Journal of the Electrochemical Society 152 12 G895-G899 JESOA 2014-10-07T04:26:11Z 2014-10-07T04:26:11Z 2005 Article Poon, C.H., Tan, L.S., Cho, B.J., Du, A.Y. (2005). Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing. Journal of the Electrochemical Society 152 (12) : G895-G899. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2073048 00134651 http://scholarbank.nus.edu.sg/handle/10635/82168 000233093000057 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.2073048
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Poon, C.H. Tan, L.S. Cho, B.J. Du, A.Y.
format	Article
author	Poon, C.H. Tan, L.S. Cho, B.J. Du, A.Y.
spellingShingle	Poon, C.H. Tan, L.S. Cho, B.J. Du, A.Y. Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
author_sort	Poon, C.H.
title	Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
title_short	Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
title_full	Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
title_fullStr	Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
title_full_unstemmed	Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
title_sort	dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82168
_version_	1821189333470674944

Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing

Similar Items