Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type

• Main Authors: Ambrosi, Adriano, Poh, Hwee Ling, Wang, Lu, Sofer, Zdenek, Pumera, Martin
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/101684; http://hdl.handle.net/10220/19719
• Institution: Nanyang Technological University

Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor...