Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type

• المؤلفون الرئيسيون: Ambrosi, Adriano, Poh, Hwee Ling, Wang, Lu, Sofer, Zdenek, Pumera, Martin
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101684; http://hdl.handle.net/10220/19719

Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor...