Ambrosi, A., Poh, H. L., Wang, L., Sofer, Z., Pumera, M., & Sciences, S. o. P. a. M. (2014). Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type.
استشهاد بنمط شيكاغوAmbrosi, Adriano, Hwee Ling Poh, Lu Wang, Zdenek Sofer, Martin Pumera, و School of Physical and Mathematical Sciences. Capacitance of P- and N-doped Graphenes Is Dominated By Structural Defects Regardless of the Dopant Type. 2014.
MLA استشهادAmbrosi, Adriano, et al. Capacitance of P- and N-doped Graphenes Is Dominated By Structural Defects Regardless of the Dopant Type. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.