Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

10.1063/1.3465327

Saved in:
Bibliographic Details
Main Authors: Chin, H.-C., Gong, X., Ng, T.K., Loke, W.K., Wong, C.P., Shen, Z., Wicaksono, S., Yoon, S.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56758
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore