Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

10.1063/1.4784065

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Bibliographic Details
Main Authors: Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57059
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57059

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