Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy

by Tripathy, S., Chia, C.K., Dong, J.R., Chua, S.J.
Published 2014

Bandgap engineering in semiconductor quantum dots

by Chia, C.K., Dong, J.R., Chua, S.J., Tripathy, S.
Published 2014

InAs self-organized quantum dots grown by molecular beam epitaxy using a "nucleation-augmented" method

by Chia, C.K., Chua, S.J., Miao, Z., Chye, Y.H.
Published 2014

Ultrawide band quantum dot light emitting device by postfabrication laser annealing

by Chia, C.K., Chua, S.J., Dong, J.R., Teo, S.L.
Published 2014

Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

by Chia, C.K., Chua, S.J., Miao, Z.L., Chye, Y.H.
Published 2014

Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction

by Guo, P., Yang, Y., Cheng, Y., Han, G., Chia, C.K., Yeo, Y.-C.
Published 2014

High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer

by Miao, Z.L., Chua, S.J., Tripathy, S., Chia, C.K., Chye, Y.H., Chen, P.
Published 2014

Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures

by Chia, C.K., Chua, S.J., Wang, Y.J., Yong, A.M., Chow, S.Y.
Published 2014

Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

by Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
Published 2014

Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate

by Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
Published 2014

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

by Xu, Z., Yoon, S.F., Yeo, Y.C., Chia, C.K., Cheng, Y.B., Dalapati, G.K.
Published 2014

Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate

by Chia, C.K., Zhang, Y.W., Wong, S.S., Chua, S.J., Yong, A.M., Chow, S.Y.
Published 2014

Erratum: Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate (Journal of Applied Physics (2012) 111 (044504))

by Xu, Z., Yoon, S.F., Yeo, Y.C., Chia, C.K., Cheng, Y.B., Dalapati, G.K.
Published 2014

Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate

by Chia, C.K., Zhang, Y.W., Wong, S.S., Yong, A.M., Chow, S.Y., Chua, S.J., Guo, J.
Published 2014

Integration of TaOx-based resistive-switching element and GaAs diode

by Xu Z., Tong X., Yoon S.F., Yeo Y.C., Chia C.K., Dalapati G.K., Chi D.Z.
Published 2020

Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications

by Dalapati, G.K., Kumar, A., Wong, A.S.W., Kumar, M.K., Chia, C.K., Ho, G.W., Chi, D.
Published 2014

Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

by Gong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C.
Published 2014

Enhance Cascaded H-Bridge Multilevel Inverter with Artificial Intelligence Control

by Buswig, Yonis.M.Yonis, Sim, S.Y., Chia, C.K, Utomo, W.M, Goh, H.H., Lim, A.J.M.S., Kek, S.L., Bohari, A., Cham, C.L
Published 2018

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

by Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Published 2014

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

by Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Published 2014