Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures

Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures

10.1016/j.tsf.2006.11.011

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Bibliographic Details
Main Authors: Chia, C.K., Chua, S.J., Wang, Y.J., Yong, A.M., Chow, S.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Impurity free vacancy disordering
Intermixing
Molecular-beam epitaxy
Optical properties
Photonic integration
Quantum dots
Rapid thermal annealing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82517
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82517

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