Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures

• Main Authors: Chia, C.K., Chua, S.J., Wang, Y.J., Yong, A.M., Chow, S.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Impurity free vacancy disordering; Intermixing; Molecular-beam epitaxy; Optical properties; Photonic integration; Quantum dots; Rapid thermal annealing
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82517
• Institution: National University of Singapore

10.1016/j.tsf.2006.11.011