Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
10.1063/1.4784065
Saved in:
Main Authors: | Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57059 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
by: Goh, K.-H., et al.
Published: (2014) -
Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires
by: Chin, H.-C., et al.
Published: (2014) -
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
by: Zhu, M., et al.
Published: (2014) -
Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
by: Liu, B., et al.
Published: (2014) -
In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
by: Chin, H.-C., et al.
Published: (2014)