Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique

10.1063/1.107664

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Bibliographic Details
Main Authors: Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62823
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Institution: National University of Singapore