Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique

• Main Authors: Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/62823
• Institution: National University of Singapore

10.1063/1.107664