Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique

10.1063/1.107664

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Main Authors: Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62823
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-628232024-11-11T16:30:55Z Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique Lau, W.S. Chong, T.C. Tan, L.S. Goo, C.H. Goh, K.S. Lee, K.M. ELECTRICAL ENGINEERING 10.1063/1.107664 Applied Physics Letters 61 1 49-51 2014-06-17T06:55:14Z 2014-06-17T06:55:14Z 1992 Article Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M. (1992). Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique. Applied Physics Letters 61 (1) : 49-51. ScholarBank@NUS Repository. https://doi.org/10.1063/1.107664 00036951 http://scholarbank.nus.edu.sg/handle/10635/62823 A1992JB74700017 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.107664
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lau, W.S.
Chong, T.C.
Tan, L.S.
Goo, C.H.
Goh, K.S.
Lee, K.M.
format Article
author Lau, W.S.
Chong, T.C.
Tan, L.S.
Goo, C.H.
Goh, K.S.
Lee, K.M.
spellingShingle Lau, W.S.
Chong, T.C.
Tan, L.S.
Goo, C.H.
Goh, K.S.
Lee, K.M.
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
author_sort Lau, W.S.
title Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
title_short Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
title_full Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
title_fullStr Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
title_full_unstemmed Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
title_sort study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62823
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