Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

10.1149/05009.0023ecst

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Bibliographic Details
Main Authors: Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70074
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/70074

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