A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

by Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu
Published 2013

Strain engineering of ultra-thin silicon-on-insulator structures using ion implant

by Ding, Y., Cheng, R., Zhou, Q., Du, A., Daval, N., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

by Ding, Y., Cheng, R., Zhou, Q., Du, A., Daval, N., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

Self-selection unipolar HfOx-Based RRAM

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

by Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

by Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Published 2014

High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

by Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Pulido, M., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

by Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

by Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

by Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
Published 2013

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

by Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., Dong, Y., Tong, Y., Bourdelle, K., Daval, N., Delprat, D., Nguyen, B.-Y., Augendre, E., Yeo, Y.-C.
Published 2014

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

by Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014

Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

by Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

by Tran, X.A., Gao, B., Kang, J.F., Wu, L., Wang, Z.R., Fang, Z., Pey, K.L., Yeo, Y.C., Du, A.Y., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

by Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
Published 2014

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

by Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014