A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

• المؤلفون الرئيسيون: Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97956; http://hdl.handle.net/10220/11358
• المؤسسة: Nanyang Technological University

In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resista...