A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resista...

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Bibliographic Details
Main Authors: Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97956
http://hdl.handle.net/10220/11358
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/97956
http://hdl.handle.net/10220/11358

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