A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resista...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97956 http://hdl.handle.net/10220/11358 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition). |
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