A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resista...

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Main Authors: Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97956
http://hdl.handle.net/10220/11358
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-979562020-03-07T14:02:46Z A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture Liu, W. J. Yeo, Y. C. Nguyen, B. Y. Tran, Xuan Anh Zhu, Wei Yu, Hongyu School of Electrical and Electronic Engineering In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition). 2013-07-15T02:22:15Z 2019-12-06T19:48:45Z 2013-07-15T02:22:15Z 2019-12-06T19:48:45Z 2012 2012 Journal Article https://hdl.handle.net/10356/97956 http://hdl.handle.net/10220/11358 10.1109/LED.2012.2210855 en IEEE electron device letters © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liu, W. J.
Yeo, Y. C.
Nguyen, B. Y.
Tran, Xuan Anh
Zhu, Wei
Yu, Hongyu
format Article
author Liu, W. J.
Yeo, Y. C.
Nguyen, B. Y.
Tran, Xuan Anh
Zhu, Wei
Yu, Hongyu
spellingShingle Liu, W. J.
Yeo, Y. C.
Nguyen, B. Y.
Tran, Xuan Anh
Zhu, Wei
Yu, Hongyu
A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
author_sort Liu, W. J.
title A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
title_short A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
title_full A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
title_fullStr A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
title_full_unstemmed A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
title_sort self-rectifying a1oy bipolar rram with sub-50μa set/reset current for cross-bar architecture
publishDate 2013
url https://hdl.handle.net/10356/97956
http://hdl.handle.net/10220/11358
_version_ 1681037707599413248

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