Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

by Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., Dong, Y., Tong, Y., Bourdelle, K., Daval, N., Delprat, D., Nguyen, B.-Y., Augendre, E., Yeo, Y.-C.
Published 2014