Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

10.1109/IEDM.2013.6724699

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Bibliographic Details
Main Authors: Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., Dong, Y., Tong, Y., Bourdelle, K., Daval, N., Delprat, D., Nguyen, B.-Y., Augendre, E., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83499
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83499

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