A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

10.1109/IEDM.2011.6131678

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Bibliographic Details
Main Authors: Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83381
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83381

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