A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

10.1109/IEDM.2011.6131678

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Bibliographic Details
Main Authors:	Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83381
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83381
record_format	dspace
spelling	sg-nus-scholar.10635-833812024-11-11T21:23:14Z A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs Ding, Y. Cheng, R. Koh, S.-M. Liu, B. Gyanathan, A. Zhou, Q. Tong, Y. Lim, P.S.-Y. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2011.6131678 Technical Digest - International Electron Devices Meeting, IEDM 35.4.1-35.4.4 TDIMD 2014-10-07T04:40:35Z 2014-10-07T04:40:35Z 2011 Conference Paper Ding, Y.,Cheng, R.,Koh, S.-M.,Liu, B.,Gyanathan, A.,Zhou, Q.,Tong, Y.,Lim, P.S.-Y.,Han, G.,Yeo, Y.-C. (2011). A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs. Technical Digest - International Electron Devices Meeting, IEDM : 35.4.1-35.4.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2011.6131678" target="_blank">https://doi.org/10.1109/IEDM.2011.6131678</a> 9781457705052 01631918 http://scholarbank.nus.edu.sg/handle/10635/83381 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2011.6131678
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ding, Y. Cheng, R. Koh, S.-M. Liu, B. Gyanathan, A. Zhou, Q. Tong, Y. Lim, P.S.-Y. Han, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ding, Y. Cheng, R. Koh, S.-M. Liu, B. Gyanathan, A. Zhou, Q. Tong, Y. Lim, P.S.-Y. Han, G. Yeo, Y.-C.
spellingShingle	Ding, Y. Cheng, R. Koh, S.-M. Liu, B. Gyanathan, A. Zhou, Q. Tong, Y. Lim, P.S.-Y. Han, G. Yeo, Y.-C. A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
author_sort	Ding, Y.
title	A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
title_short	A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
title_full	A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
title_fullStr	A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
title_full_unstemmed	A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
title_sort	new ge 2sb 2te 5 (gst) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel finfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83381
_version_	1821215169137606656

A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

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