Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack

by Gyanathan, A., Yeo, Y.-C.
Published 2014

Two-bit multi-level phase change random access memory with a triple phase change material stack structure

by Gyanathan, A., Yeo, Y.-C.
Published 2014

Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

by Gyanathan, A., Yeo, Y.-C.
Published 2014

Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers

by Gyanathan, A., Yeo, Y.-C.
Published 2014

Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer

by Gyanathan, A., Yeo, Y.-C.
Published 2014

A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs

by Ding, Y., Tong, X., Zhou, Q., Liu, B., Gyanathan, A., Tong, Y., Yeo, Y.-C.
Published 2014

A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs

by Cheng, R., Ding, Y., Koh, S.-M., Gyanathan, A., Bai, F., Liu, B., Yeo, Y.-C.
Published 2014

A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

by Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
Published 2014