Two-bit multi-level phase change random access memory with a triple phase change material stack structure

10.1063/1.4765742

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Bibliographic Details
Main Authors: Gyanathan, A., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83234
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Institution: National University of Singapore