Multi-Level Phase Change Random Access Memory (PCRAM) Devices with Ultrathin Barrier Layers

Multi-Level Phase Change Random Access Memory (PCRAM) Devices with Ultrathin Barrier Layers

Ph.D

Saved in:
Bibliographic Details
Main Author: ASHVINI GYANATHAN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
Multi-level PCRAM, Ge2Sb2Te5, Nitrogen-doped Ge2Sb2Te5, AgInSbTe, Ge1Sb4Te7, Ultrathin barrier layer
Online Access:http://scholarbank.nus.edu.sg/handle/10635/48340
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/48340

Similar Items