Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

10.1109/TED.2012.2211881

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Bibliographic Details
Main Authors: Gyanathan, A., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ag 0.5In 0.5 Sb 3 Te 6 (AIST)
crystallization temperature
Ge 1 Sb 4 Te 7 (GST147)
Ge 2 Sb 2 Te 5 (GST)
melting temperature
multilevel
nitrogen-doped GST (NGST)
phase-change random access memory (PCRAM)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82887
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82887

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