Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

10.1109/TED.2012.2211881

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Bibliographic Details
Main Authors:	Gyanathan, A., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ag 0.5In 0.5 Sb 3 Te 6 (AIST) crystallization temperature Ge 1 Sb 4 Te 7 (GST147) Ge 2 Sb 2 Te 5 (GST) melting temperature multilevel nitrogen-doped GST (NGST) phase-change random access memory (PCRAM)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82887
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82887
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spelling	sg-nus-scholar.10635-828872023-10-30T20:19:10Z Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack Gyanathan, A. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Ag 0.5In 0.5 Sb 3 Te 6 (AIST) crystallization temperature Ge 1 Sb 4 Te 7 (GST147) Ge 2 Sb 2 Te 5 (GST) melting temperature multilevel nitrogen-doped GST (NGST) phase-change random access memory (PCRAM) 10.1109/TED.2012.2211881 IEEE Transactions on Electron Devices 59 11 2910-2916 IETDA 2014-10-07T04:34:40Z 2014-10-07T04:34:40Z 2012 Article Gyanathan, A., Yeo, Y.-C. (2012). Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack. IEEE Transactions on Electron Devices 59 (11) : 2910-2916. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2211881 00189383 http://scholarbank.nus.edu.sg/handle/10635/82887 000310385100007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ag 0.5In 0.5 Sb 3 Te 6 (AIST) crystallization temperature Ge 1 Sb 4 Te 7 (GST147) Ge 2 Sb 2 Te 5 (GST) melting temperature multilevel nitrogen-doped GST (NGST) phase-change random access memory (PCRAM)
spellingShingle	Ag 0.5In 0.5 Sb 3 Te 6 (AIST) crystallization temperature Ge 1 Sb 4 Te 7 (GST147) Ge 2 Sb 2 Te 5 (GST) melting temperature multilevel nitrogen-doped GST (NGST) phase-change random access memory (PCRAM) Gyanathan, A. Yeo, Y.-C. Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
description	10.1109/TED.2012.2211881
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gyanathan, A. Yeo, Y.-C.
format	Article
author	Gyanathan, A. Yeo, Y.-C.
author_sort	Gyanathan, A.
title	Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
title_short	Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
title_full	Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
title_fullStr	Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
title_full_unstemmed	Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
title_sort	phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82887
_version_	1781784245768814592

Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

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