Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack

• Main Authors: Gyanathan, A., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Ag 0.5In 0.5 Sb 3 Te 6 (AIST); crystallization temperature; Ge 1 Sb 4 Te 7 (GST147); Ge 2 Sb 2 Te 5 (GST); melting temperature; multilevel; nitrogen-doped GST (NGST); phase-change random access memory (PCRAM)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82887
• Institution: National University of Singapore

10.1109/TED.2012.2211881