Two-bit multi-level phase change random access memory with a triple phase change material stack structure
10.1063/1.4765742
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sg-nus-scholar.10635-832342023-10-26T21:22:16Z Two-bit multi-level phase change random access memory with a triple phase change material stack structure Gyanathan, A. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.4765742 Journal of Applied Physics 112 10 - JAPIA 2014-10-07T04:38:53Z 2014-10-07T04:38:53Z 2012-11-15 Article Gyanathan, A., Yeo, Y.-C. (2012-11-15). Two-bit multi-level phase change random access memory with a triple phase change material stack structure. Journal of Applied Physics 112 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4765742 00218979 http://scholarbank.nus.edu.sg/handle/10635/83234 000311969800146 Scopus |
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10.1063/1.4765742 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Gyanathan, A. Yeo, Y.-C. |
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Gyanathan, A. Yeo, Y.-C. |
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Gyanathan, A. Yeo, Y.-C. Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
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Gyanathan, A. |
title |
Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
title_short |
Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
title_full |
Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
title_fullStr |
Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
title_full_unstemmed |
Two-bit multi-level phase change random access memory with a triple phase change material stack structure |
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two-bit multi-level phase change random access memory with a triple phase change material stack structure |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/83234 |
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