Investigation of new materials for fast speed phase-change random access memory

• Main Author: Law, Minghui
• Other Authors: Tay Beng Kang
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
• Online Access: http://hdl.handle.net/10356/18980
• Institution: Nanyang Technological University

Phase Change Random Access Memory (PCRAM) has shown to have the most potential over other types of emerging non-volatile memories to become an alternative to FLASH memories. However, several problems regarding its practical use still remain. In this project, studies to increase the life time of th...