Investigations of high endurance asymmetric phase change random access memory

Investigations of high endurance asymmetric phase change random access memory

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors: Hock, K.L., Shi, L., Zhao, R., Yang, H., Kian, G.L., Li, J., Tow, C.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83867
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83867

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