Investigations of high endurance asymmetric phase change random access memory

Investigations of high endurance asymmetric phase change random access memory

Materials Research Society Symposium Proceedings

Saved in:
Bibliographic Details
Main Authors: Hock, K.L., Shi, L., Zhao, R., Yang, H., Kian, G.L., Li, J., Tow, C.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83867
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Materials Research Society Symposium Proceedings

Similar Items