Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

by Liu, B., Lim, P.S.Y., Yeo, Y.-C.
Published 2014

Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height

by Lim, P.S.Y., Zhou, Q., Chi, D., Yeo, Y.-C.
Published 2014

Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

by Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C.
Published 2014

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

by Lim, P.S.Y., Chi, D.Z., Zhou, Q., Yeo, Y.-C.
Published 2014

Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts

by Tong, Y., Liu, B., Lim, P.S.Y., Zhou, Q., Yeo, Y.-C.
Published 2014

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

by Lim, P.S.Y., Zhi Chi, D., Chong Lim, P., Yeo, Y.-C.
Published 2014

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

by Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C.
Published 2014

Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs

by Zhang, X., Guo, H., Chin, H.-C., Gong, X., Lim, P.S.Y., Yeo, Y.-C.
Published 2014

Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

by Lim, P.S.Y., Chi, D.Z., Lim, P.C., Wang, X.C., Chan, T.K., Osipowicz, T., Yeo, Y.-C.
Published 2014

A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

by Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
Published 2014

High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

by Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Pulido, M., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

by Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
Published 2014

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

by Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs

by Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
Published 2014

III-V MOSFETs with a new self-aligned contact

by Zhang, X., Guo, H., Ko, C.-H., Wann, C.H., Cheng, C.-C., Lin, H.-Y., Chin, H.-C., Gong, X., Lim, P.S.Y., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Yeo., Y.-C.
Published 2014

The Lipid Paradox is present in ST-elevation but not in non-ST-elevation myocardial infarction patients: Insights from the Singapore Myocardial Infarction Registry

by Sia, C.-H., Zheng, H., Ho, A.F.-W., Bulluck, H., Chong, J., Foo, D., Foo, L.-L., Lim, P.Z.Y., Liew, B.W., Tan, H.-C., Yeo, T.-C., Chua, T.S.J., Chan, M.Y.-Y., Hausenloy, D.J.
Published 2021

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

by Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C.
Published 2014