Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

10.1109/IRPS.2010.5488674

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Bibliographic Details
Main Authors: Liu, B., Lim, P.S.Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Ge
High-κ
NBTI
P-FET
Strain
Wafer bending
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83674
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83674

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