Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

10.1109/IRPS.2010.5488674

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Bibliographic Details
Main Authors: Liu, B., Lim, P.S.Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Ge
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83674
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-836742024-11-08T16:46:16Z Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric Liu, B. Lim, P.S.Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Ge High-κ NBTI P-FET Strain Wafer bending 10.1109/IRPS.2010.5488674 IEEE International Reliability Physics Symposium Proceedings 1055-1057 2014-10-07T04:43:53Z 2014-10-07T04:43:53Z 2010 Conference Paper Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2010). Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric. IEEE International Reliability Physics Symposium Proceedings : 1055-1057. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488674 9781424454310 15417026 http://scholarbank.nus.edu.sg/handle/10635/83674 000287515600186 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Ge
High-κ
NBTI
P-FET
Strain
Wafer bending
spellingShingle Ge
High-κ
NBTI
P-FET
Strain
Wafer bending
Liu, B.
Lim, P.S.Y.
Yeo, Y.-C.
Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
description 10.1109/IRPS.2010.5488674
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Liu, B.
Lim, P.S.Y.
Yeo, Y.-C.
format Conference or Workshop Item
author Liu, B.
Lim, P.S.Y.
Yeo, Y.-C.
author_sort Liu, B.
title Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
title_short Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
title_full Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
title_fullStr Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
title_full_unstemmed Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
title_sort effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83674
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