Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

• Main Authors: Liu, B., Lim, P.S.Y., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Ge; High-κ; NBTI; P-FET; Strain; Wafer bending
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83674
• Institution: National University of Singapore

10.1109/IRPS.2010.5488674