Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

10.1109/LED.2007.911987

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Bibliographic Details
Main Authors: Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High obility
High-κ gate dielectric
PMOSFETs
Quantum wells (QWs)
Silicon-germanium (SiGe)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82118
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82118

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