Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

10.1109/LED.2005.857711

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High-κ
Metal gate
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82170
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82170

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