Park, C., Cho, B., & ENGINEERING, E. &. C. (2014). Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning.
استشهاد بنمط شيكاغوPark, C.S., B.J Cho, و ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.
MLA استشهادPark, C.S., B.J Cho, و ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.