Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack

10.1109/LED.2004.824251

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Bibliographic Details
Main Authors: Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Fermi-level pinning
Metal gate
TaN
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82355
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82355

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