Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

10.1109/LED.2005.857711

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Bibliographic Details
Main Authors:	Park, C.S., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High-κ Metal gate Work function
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82170
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82170
record_format	dspace
spelling	sg-nus-scholar.10635-821702023-10-29T23:10:25Z Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning Park, C.S. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING High-κ Metal gate Work function 10.1109/LED.2005.857711 IEEE Electron Device Letters 26 11 796-798 EDLED 2014-10-07T04:26:13Z 2014-10-07T04:26:13Z 2005-11 Article Park, C.S., Cho, B.J. (2005-11). Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning. IEEE Electron Device Letters 26 (11) : 796-798. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857711 07413106 http://scholarbank.nus.edu.sg/handle/10635/82170 000232821500006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	High-κ Metal gate Work function
spellingShingle	High-κ Metal gate Work function Park, C.S. Cho, B.J. Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
description	10.1109/LED.2005.857711
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Park, C.S. Cho, B.J.
format	Article
author	Park, C.S. Cho, B.J.
author_sort	Park, C.S.
title	Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
title_short	Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
title_full	Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
title_fullStr	Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
title_full_unstemmed	Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
title_sort	dopant-free fusi ptxsi metal gate for high work function and reduced fermi-level pinning
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82170
_version_	1781784073063104512

Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

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