Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

• Main Authors: Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: High obility; High-κ gate dielectric; PMOSFETs; Quantum wells (QWs); Silicon-germanium (SiGe)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82118
• Institution: National University of Singapore

10.1109/LED.2007.911987