Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

10.1109/LED.2007.911987

Saved in:

Bibliographic Details
Main Authors:	Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High obility High-κ gate dielectric PMOSFETs Quantum wells (QWs) Silicon-germanium (SiGe)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82118
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82118
record_format	dspace
spelling	sg-nus-scholar.10635-821182023-10-29T23:25:02Z Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks Majhi, P. Kalra, P. Harris, R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Banerjee, S. Tsai, W. Tseng, H. Jammy, R. ELECTRICAL & COMPUTER ENGINEERING High obility High-κ gate dielectric PMOSFETs Quantum wells (QWs) Silicon-germanium (SiGe) 10.1109/LED.2007.911987 IEEE Electron Device Letters 29 1 99-101 EDLED 2014-10-07T04:25:36Z 2014-10-07T04:25:36Z 2008-01 Article Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R. (2008-01). Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks. IEEE Electron Device Letters 29 (1) : 99-101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.911987 07413106 http://scholarbank.nus.edu.sg/handle/10635/82118 000252098100030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	High obility High-κ gate dielectric PMOSFETs Quantum wells (QWs) Silicon-germanium (SiGe)
spellingShingle	High obility High-κ gate dielectric PMOSFETs Quantum wells (QWs) Silicon-germanium (SiGe) Majhi, P. Kalra, P. Harris, R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Banerjee, S. Tsai, W. Tseng, H. Jammy, R. Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
description	10.1109/LED.2007.911987
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Majhi, P. Kalra, P. Harris, R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Banerjee, S. Tsai, W. Tseng, H. Jammy, R.
format	Article
author	Majhi, P. Kalra, P. Harris, R. Choi, K.J. Heh, D. Oh, J. Kelly, D. Choi, R. Cho, B.J. Banerjee, S. Tsai, W. Tseng, H. Jammy, R.
author_sort	Majhi, P.
title	Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
title_short	Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
title_full	Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
title_fullStr	Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
title_full_unstemmed	Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks
title_sort	demonstration of high-performance pmosfets using si-six ge1-x-si quantum wells with high-κ metal-gate stacks
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82118
_version_	1781784063707709440

Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks

Similar Items