Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness

Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness

10.1109/TED.2009.2019420

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Bibliographic Details
Main Authors: Xie, R., Phung, T.H., He, W., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Fluorine (F)
Germanium (Ge)
HfO2
High-κ gate dielectrics
Interface traps
Metal-oxide semiconductor field effect transistor (MOSFET)
MOS devices
Passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82559
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82559

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