Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness
10.1109/TED.2009.2019420
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sg-nus-scholar.10635-825592024-11-10T18:35:16Z Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness Xie, R. Phung, T.H. He, W. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Fluorine (F) Germanium (Ge) HfO2 High-κ gate dielectrics Interface traps Metal-oxide semiconductor field effect transistor (MOSFET) MOS devices Passivation 10.1109/TED.2009.2019420 IEEE Transactions on Electron Devices 56 6 1330-1337 IETDA 2014-10-07T04:30:48Z 2014-10-07T04:30:48Z 2009 Article Xie, R., Phung, T.H., He, W., Yu, M., Zhu, C. (2009). Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness. IEEE Transactions on Electron Devices 56 (6) : 1330-1337. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019420 00189383 http://scholarbank.nus.edu.sg/handle/10635/82559 000266330200021 Scopus |
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Singapore Singapore |
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Fluorine (F) Germanium (Ge) HfO2 High-κ gate dielectrics Interface traps Metal-oxide semiconductor field effect transistor (MOSFET) MOS devices Passivation |
| spellingShingle |
Fluorine (F) Germanium (Ge) HfO2 High-κ gate dielectrics Interface traps Metal-oxide semiconductor field effect transistor (MOSFET) MOS devices Passivation Xie, R. Phung, T.H. He, W. Yu, M. Zhu, C. Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| description |
10.1109/TED.2009.2019420 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Xie, R. Phung, T.H. He, W. Yu, M. Zhu, C. |
| format |
Article |
| author |
Xie, R. Phung, T.H. He, W. Yu, M. Zhu, C. |
| author_sort |
Xie, R. |
| title |
Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| title_short |
Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| title_full |
Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| title_fullStr |
Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| title_full_unstemmed |
Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness |
| title_sort |
interface-engineered high-mobility high-κ/ge pmosfets with 1-nm equivalent oxide thickness |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82559 |
| _version_ |
1821184445790552064 |