Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs

• Main Authors: Xie, R., Phung, T.H., Yu, M., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Bias temperature instability (BTI); Fluorine (F); Germanium (Ge); HfO2; High-k gate dielectrics; Interface traps; Metal-oxide-semiconductor (MOS) devices; MOS fieldeffect transistor (MOSFET); Passivation; Silicon nitride (SN)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82217
• Institution: National University of Singapore

10.1109/TED.2010.2046992