Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs
10.1109/TED.2010.2046992
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82217 |
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| Institution: | National University of Singapore |